Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”

The study of the electrophysical characteristics crystalline semiconductors with structural defects is practical interest in development radiation-resistant varactors. capacitance-voltage a disordered semiconductor can be used to determine concentration point its crystal matrix. purpose this work calculate low-frequency admittance capacitor working substance “insulator–crystalline t -defects charge states (−1), (0) and (+1)–insulator”. A layer partially thickness 150 μm separated from metal plates by insulating layers polyimide 3 μm. be, for example, highly defective silicon containing randomly (Poissonian) distributed over (0), (+1), between which single electrons migrate hopping manner. It assumed that electron hops occur only state (−1) (+1). In work, first time, averaging diffusion coefficients all probable lengths via (+1) covalent matrix was carried out. For such an element, phase shift angle current voltage as functions on applied electrodes were calculated at -defect 3∙10 19 cm −3 temperatures 250, 300, 350 K temperature 300 concentrations 1∙10 , 20 .